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Bienvenue dans la collection HAL du groupe CS : Convertisseurs Statiques
Nos activités de recherche couvrent les problématiques principales de la conversion d’énergie électrique et reposent sur la combinaison d’approches théoriques et expérimentales autour de la notion de cellule de commutation.
Le groupe s’est spécialisé dans l’étude de nouvelles structures de convertisseurs multicellulaires de moyenne et de forte puissance (du kW au MW) mettant en jeu des agencements originaux des cellules de commutation imbriquées séries, superposées parallèles et la parallélisation globale ou partielle par des dispositifs innovants de couplages magnétiques.
Types de documents publiés
Sujets
Silicon
Power converter
Design
Gate driver
Court-circuit
Fuel cells
SiC Mosfet
Traction power supplies
Power integration
Zero voltage switching
Gate-Damage
Intercell transformers
Medium voltage
Hydrogen
Excimer Lamp
SiC MOSFETs
Aerospace
Detection
Power Converters
Monolithic integration
Diamond
CMOS
Switching frequency
Ultra Violet Generation UV
Wide band gap semiconductors
DC-DC power convertors
Dielectric Barrier Discharge
Self-switching
Active Gate Driver
MOSFET
Robustness
Skin effect
Fault tolerance
Wide bandgap semiconductors
MOSFET SiC
Busbars
Inverter
Fuel cell
Traction
Power Converter Design
Buck converter
SiC MOSFET
Short-circuit
Gate-Aging
Thyristor
Railway electrification
Driver circuits
Gate Driver
DC-DC power converters
Switching convertors
IGBT
Substations
Voltage control
Efficiency
Short-Circuit
Capacitors
3D finite elements method
MOSFET circuits
DBD
Insulated gate bipolar transistors
Power convertors
Bridge circuits
Silicon compounds
Static converter
Silicon carbide
Switching losses
Reliability
Renewable energy
Photovoltaic hybrid system
Coupled inductors
Power MOSFET
Device simulation
Failure-Mode
AC-DC multilevel converter
Decentralized control
Railways
Multilevel converter
Harmonic interactions
Interleaved converters
GaN
Electronique de puissance
Modelling
Gate-Driver
2D physical simulation
Choppers circuits
Silicon Carbide SiC
Multilevel converters
Optimization
Power conversion
Distributed control
Electrolyzer
Power electronics
Electric Discharge Power Supply
Optimisation
InterCell Transformer ICT
Rail transportation
HEMT GaN
Switches
Rail transportation power systems
Elemental semiconductors
Derniers dépôts
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Mathis Picot-Digoix, T-L Le, S. Azzopardi, Sébastien Vinnac, Frédéric Richardeau, et al.. On-Line Digital Fine Monitoring of SiC MOSFET Gate-Oxide Health: A Dual-Channel Gate Driving Approach. 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Jun 2024, Bremen, Germany. pp.84-87, ⟨10.1109/ISPSD59661.2024.10579698⟩. ⟨hal-04647322v1⟩
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Anas El Boubkari, Nicolas Rouger, Frédéric Richardeau, Pierre Calmes, Matthew Bacchi, et al.. CMOS Gate Driver with Integrated Gate Current Monitoring Method for Fault Under Load Short Circuit Detection of SiC Power Modules. 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Jun 2024, Bremen, Germany. pp.454-457, ⟨10.1109/ISPSD59661.2024.10579581⟩. ⟨hal-04647315⟩
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Mustafa Shqair, Emmanuel Sarraute, Thibauld Cazimajou, Frédéric Richardeau. Transient Thermal 2D FEM Analysis of SiC MOSFET in Short-Circuit Operation Including High-temperature Material Laws and Phase Transition of Aluminum Source Electrode. Microelectronics Reliability, 2024, 159, pp.115440. ⟨10.1016/j.microrel.2024.115440⟩. ⟨hal-04613010⟩
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Matthieu Masson, Marc Cousineau, Nicolas C. Rouger, Frédéric Richardeau, Pierre Calmes, et al.. Système de gestion optimale du temps-mort intégré au gate-driver CMOS grâce à la mesure du courant de grille pour les MOSFETs SiC. Congrès de l'école doctorale GEETS, Ecole Doctorale GEETS, Jun 2024, TOULOUSE (FRANCE), France. ⟨hal-04606906v2⟩