Article Dans Une Revue Nanophotonics Année : 2025

Sub-MHz homogeneous linewidth in epitaxial Y 2 O 3 : Eu 3+ thin film on silicon

Résumé

Abstract Thin films provide nanoscale confinement together with compatibility with photonic and microwave architectures, making them ideal candidates for chip-scale quantum devices. In this work, we propose a thin film fabrication approach yielding the epitaxial growth of Eu 3+ doped Y 2 O 3 on silicon. We combine two of the most prominent thin film deposition techniques: chemical vapor deposition (CVD) and molecular beam epitaxy (MBE). We report sub-megahertz optical homogeneous linewidths up to 8 K for the Eu 3+ dopants in the film, and lowest value of 270 kHz. This result constitutes a ten-fold improvement with respect to previous reports on the same material, opening promising perspectives for the development of scalable and compact quantum devices containing rare-earth ions.
Fichier principal
Vignette du fichier
10.1515_nanoph-2024-0682.pdf (1) Télécharger le fichier
Origine Publication financée par une institution
Licence

Dates et versions

hal-04954868 , version 1 (18-02-2025)

Licence

Identifiants

Citer

Diana Serrano, Nao Harada, Romain Bachelet, Anna Blin, Alban Ferrier, et al.. Sub-MHz homogeneous linewidth in epitaxial Y 2 O 3 : Eu 3+ thin film on silicon. Nanophotonics, 2025, ⟨10.1515/nanoph-2024-0682⟩. ⟨hal-04954868⟩
0 Consultations
0 Téléchargements

Altmetric

Partager

More