Stability of Vicinal Surfaces: Beyond the Quasistatic Approximation - École polytechnique
Journal Articles Physical Review Letters Year : 2020

Stability of Vicinal Surfaces: Beyond the Quasistatic Approximation

Abstract

We revisit the step bunching instability without recourse to the quasistatic approximation and show that the stability diagrams are significantly altered, even in the low-deposition regime where it was thought sufficient. In particular, steps are unstable against bunching for attachment-detachment limited growth. By accounting for the dynamics and chemical effects, we can explain the onset of step bunching in Si(111)−(7×7) and GaAs(001) without resort to the inverse Schwoebel barrier or step-edge diffusion. Further, the size-scaling analysis of step-bunch growth, as induced by these two combined effects, agrees with the bunching regime observed at 750 °C in Si(111)−(7×7).
Fichier principal
Vignette du fichier
Guin_et_al_PRL2020_Stability_of_vicinal_surfaces.pdf (457 Ko) Télécharger le fichier
SM_Guin_et_al_PRL2020_Stability_of_vicinal_surfaces.pdf (264.98 Ko) Télécharger le fichier
Origin Publisher files allowed on an open archive

Dates and versions

hal-02400748 , version 1 (09-05-2023)

Identifiers

Cite

Laurent Guin, Michel E Jabbour, Léopold Shaabani Ardali, Lucas Benoit-Marechal, Nicolas Triantafyllidis. Stability of Vicinal Surfaces: Beyond the Quasistatic Approximation. Physical Review Letters, 2020, ⟨10.1103/PhysRevLett.124.036101⟩. ⟨hal-02400748⟩
85 View
55 Download

Altmetric

Share

More