Electron beam induced current microscopy investigation of GaN nanowire arrays grown on Si substrates - École polytechnique Access content directly
Journal Articles Materials Science in Semiconductor Processing Year : 2016

Electron beam induced current microscopy investigation of GaN nanowire arrays grown on Si substrates

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hal-01401078 , version 1 (22-11-2016)

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Vladimir Neplokh, Ahmed Ali, François H. Julien, Martin Foldyna, Ivan Mukhin, et al.. Electron beam induced current microscopy investigation of GaN nanowire arrays grown on Si substrates. Materials Science in Semiconductor Processing, 2016, 55, pp.72 - 78. ⟨10.1016/j.mssp.2016.03.002⟩. ⟨hal-01401078⟩
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