EPITAXIALLY GROWN CRYSTALLINE SILICON AS ELECTRON SELECTIVE CONTACT LAYER FOR CRYSTALLINE GERMANIUM TPV CELLS - École polytechnique Accéder directement au contenu
Communication Dans Un Congrès Année : 2023

EPITAXIALLY GROWN CRYSTALLINE SILICON AS ELECTRON SELECTIVE CONTACT LAYER FOR CRYSTALLINE GERMANIUM TPV CELLS

M Gamel
  • Fonction : Auteur
G López
  • Fonction : Auteur
T Jawhari
  • Fonction : Auteur
A J Olivares
  • Fonction : Auteur
M Garín
  • Fonction : Auteur
I Martín
  • Fonction : Auteur

Résumé

Crystalline germanium has been proposed as a cost-effective absorber for the fabrication of thermophotovoltaic (TPV) cells which require, among other technologies, the development of electron-selective contacts. In this work, we explore the deposition process of n-type high-quality crystalline silicon (c-Si(n)) on p-type crystalline germanium (c-Ge) substrates using Plasma-Enhanced Chemical Vapor Deposition (PECVD) to create c-Si(n)/c-Ge(p) heterojunctions that function as electron-selective contacts. Our analysis includes material characterization using Raman spectroscopy, X-ray diffraction, and Spectroscopic Ellipsometry measurements, confirming the crystalline nature of the epitaxially grown silicon layers. The interface quality of the heterojunction is studied by measuring the effective lifetime. The results demonstrate that the addition of a thin intrinsic amorphous silicon layer at the interface improves its passivation. Additional improvement is obtained after depositing a thin n-type amorphous layer on top of the c-Si(n), achieving a surface recombination velocity of 334 cm/s. This better passivation positively impacts both the open circuit voltage and the fill factor of 1x1 cm 2 finished devices, leading to an efficiency of 3.38%. The results suggest the potential of c-Si/c-Ge heterojunction for cost-effective c-Ge cells, with room for efficiency improvements through further optimization.
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Dates et versions

hal-04317072 , version 1 (01-12-2023)

Identifiants

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M Gamel, G López, T Jawhari, A J Olivares, P Roca I Cabarrocas, et al.. EPITAXIALLY GROWN CRYSTALLINE SILICON AS ELECTRON SELECTIVE CONTACT LAYER FOR CRYSTALLINE GERMANIUM TPV CELLS. 40th European Photovoltaic Solar Energy Conference and Exhibition, Sep 2023, Lisbonne, France. ⟨10.4229/EUPVSEC2023/1CV.3.29⟩. ⟨hal-04317072⟩
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